Semiconductor Hall Effect Test
The hall effect of semiconductor materials is an important means of characterization and analysis of semiconductor materials.The hall effect is essentially the deflection of a moving charged particle in a magnetic field by lorentz's force. When charged particles (electrons or holes) are confined to a solid material, this deflection results in the accumulation of positive and negative charges in the direction perpendicular to the current and magnetic field, creating an additional transverse electric field.
Based on the hall coefficient and its relationship with temperature, the carrier concentration can be calculated, as well as the carrier concentration's relationship with temperature, from which the bandgap width and impurity ionization energy can be determined.The carrier mobility can be determined by the combined measurement of hall coefficient and resistivity, and the longitudinal carrier concentration distribution can be measured by the differential hall effect method.The degree of impurity compensation can be determined by measuring the low temperature hall effect.What is different from other tests is that in the hall parameter test, there are many test points, complicated connection, large amount of calculation, and the temperature and magnetic field environment need to be added. Under this premise, the manual test is impossible to complete.
Hall effect testing system developed by xiku technology can realize multi-parameter automatic switching measurement of thousands to tens of thousands of points. The system is composed of Keithley2400 series source table, 2700 matrix switch and hall effect testing software CycleStar, etc..The resistivity, hall coefficient, carrier concentration and hall mobility can be calculated according to the test results at different magnetic fields, temperatures and currents, and the curves can be drawn.The hall effect needs to be tested in semiconductor fabrication processes such as wafer substrates and ion implantation, or in packaged hall devices.